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PRODUCTSERIES产品系列
车规级IGBT/SiCMOSFET模块
芯片
分立器件
工业级IGBT模块
南京南瑞半导体有限公司NARI SEMICONDUCTOR
公司介绍 ABOUT
南京南瑞半导体有限公司致力于功率半导体技术研究、产品研制、应用及产业化发展，全力推进核心功率半导体器件自主可控，是国家电网有限公司战略新兴产业培育重点单位、首批入选国资委"科改示范"企业之一、国家级专精特新"小巨人"企业和国网功率半导体产业统一平台。公司汇聚了国内外一流的功率半导体研发及管理团队，建立了涵盖芯片研发，封装工艺，仿真测试、行业应用等全业务流程的专业团队。
南瑞半导体始终坚持自主创新，基于南瑞集团多年电力行业技术与经验积累，快速取得了引领行业发展的成果。自主研发的功率半导体器件电压等级涵盖650V\~6500V，公司逐步攻克多个关键技术难题，4500V、3300V、1700V、1200VIGBT器件，经中国电机工程学会鉴定，关键指标均达到国际领先水平。目前产品已广泛应用于高压柔性输电、电能质量治理、特种电源、工业传动、风力发电、光伏发电、新型储能、制氢电源、充电设施和新能源汽车等领域。
Nanjing NARI Semiconductor Co., Ltd. is committed to the research, product development, application and industrialization of power semiconductor technology.It is fully promotingthe autonomy and controllability of core powersemiconductordevices.It isa keyunit forthecultivation of strategic emerging industries of State Grid Corporation of China,one of the first batch of enterprises selected forthe"Science and Technology Reform Demonstration"by the State-owned Assets Supervision and Administration Commission of the State Council,a national-levelspecialized and sophisticated"little giant" enterprise, and the power semiconductor industry unified platform of SGCc. The company has gathered first-class power semiconductor R&D and management teams at home and abroad, and established a professonal team covering the entire business process including chip R&D, packaging technology,simulationtesting,andindustryapplications.
NARI Semiconductor has always adhered to independent innovation.Based on the technology and experience accumulation in the power industry of NARI Group for many years,it has quickly achieved results that lead the development of the industry.The voltage levels of the independently developed power semiconductor devices cover 650V to 650ov.The company has gradually overcome several key technical problems.The key indicators of 4500v, 3300V, 1700V, and 1200V IGBT devices have allreached the international leading level as identified by the Chinese Society for Electrical Engineering. At present, the products have been widely used in fields such as high-voltage flexible power transmission, power quality management, special power supplies,industrial drives,wind power generation,photovoltaic power generation,ewenergystorage,hydrogen productionpower supplies,harging facilities,andnewenergyvehicles.
国家级专精特新“小巨人”企业 National Specialized and New"Little Giant" Enterprise 首批入选国资委科改示范企业、启航企业 Science and Technology ReformDemonstration Enterprises&Sailing Enterprises 国家电网功率半导体产业统一平台 Power semiconductorindustry unified platform of SGCC
300人现有专业技术人员PROFESSIONALANDTECHNICAL PERSONNEL
80 名博士和硕士人员DOCTORS AND MASTERS
5 万只
压接式IGBT模块产能
CAPACITY OF PRESS-PACK
IGBTMODULES
50 万只焊接型功率模块产能CAPACITYOFWELDEDPOWERMODULES
核心技术 KEYKNOWHOW
芯片技术 DIETECHNOLOGY
·6500V/4500V/3300VEPTFSIGBT技术和LLC技术 ·1700V/1200V/1000V/750V/650VTrenchFSIGBT技术和FCEFRD技术 ·6500V/4500V/3300V EPT FSIGBT technology and LLCtechnology ·1700v/1200V/1000v/750V/650V Trench FS IGBT technology and FCE FRD technology
| ·Ag烧结技术 | ·Agsinteringtechnology |
| Cu线键合技术 | Cuwirebondingtechnology |
| ·AMB技术 | ·AMB technology |
| 超声波焊接技术 | Ultrasonicweldingtechnology |
| 低杂散电感设计技术 | Lowstrayinductance designtechnology |
| ·弹性压接技术 | Elasticpress-fittingtechnology |
| 静态参数测试技术 | ·Staticparametertestingtechnology |
| 动态参数测试技术 | ·Dynamicparametertestingtechnology |
| 可靠性测试技术 | ·Reliabilitytestingtechnology |
| 环境测试技术 | ·Environmentaltestingtechnology |
| 失效分析技术 | ·Failure analysistechnology |
| 损耗仿真技术 | Losssimulationtechnology |
| 热应力仿真技术 | Thermal stresssimulationtechnology |
| 电-热耦合仿真技术 | ·Electro-thermalcouplingsimulationtechnology |
| Pin针力学仿真技术 | Pinneedlemechanicssimulationtechnology |
| 数字李生技术 | DigitalTwinTechnology |
| Die 芯片 | Discretes 分立器件 | Industrial-GradeIGBTModules 工业级IGBT模块 | Automotive-GradeIGBT/SiCModules 车规级IGBT/SiCMOSFET模块 |
| 芯片产品 | |||
| DIEPRODUCTS | IGBT/FRD芯片 IGBT/FRDDIE (3300V/1700V/1200V/650V) | ||
产品特性 FEATURES
| IGBT芯片 IGBTDie | |||
| ·沟槽栅及场截止结构 TrenchGate&FieldStopStructure | ·低栅电荷 Low Gate Charge QG | ·低开关损耗 LowSwitchingLoss | 正温度系数 PositiveTemperature |
| FRD芯片 FRDDie | |||
| ·宽的安全工作 | ·参数一致性好 | ||
| ·反向恢复时间短 ShortReverseRecoveryTime | ·更优反向恢复软度 BetterReverseRecoverySoftness | WideSafeWorkingArea | GoodConsistencyofParameters |
产品列表 PRODUCTS
| PartNo. | Technology | VcE[V] | Inom[V] | Tvimax[°C] |
| DG63P33K1 | EPT | 3300 | 62.5 | 150 |
| DG200T17K4_01_A | Trench | 1700 | 200 | 175 |
| DG150T17K4_01_A | Trench | 1700 | 150 | 175 |
| DG200T12K4_01_A | Trench | 1200 | 200 | 175 |
| DG150T12K7_01_F3 12英寸 | Trench | 1200 | 150 | 175 |
| DG75T065K7_01_A | Trench | 650 | 75 | 175 |
| PartNo. | Technology | VRRM[V] | Inom[A] | Tvimax[°℃] |
| DD125F33K2 | LAC | 3300 | 125 | 150 |
| DD200S17F4_02_A | FCE | 1700 | 200 | 175 |
| DD150S17F4_01_A | FCE | 1700 | 150 | 175 |
| DD200S12F4_01_A | FCE | 1200 | 200 | 175 |
| DD150S12F4_01_A | FCE | 1200 | 150 | 175 |
| Die 芯片 | Discretes ·分立器件 | Industrial-GradeIGBTModules | Automotive-GradeIGBT/SiCModules 车规级IGBT/SiCMOSFET模块 |
| 工业级IGBT模块 | |||
| 芯片产品 | |||
| DIEPRODUCTS | SiCMOSFET芯片SiCMOSFETDIE (1700V/1200V) |
产品特性 FEATURES
| SiCMOSFET芯片SiCMOSFETDie | ||
| 第三代SiCMOSFET技术 | ·高阻断电压/低导通电阻 | ·高开关速度/低电容 |
| 3nd GenerationSiCMOSFETTechnology | HighBlocking Voltagewith Low On-Resistance | High Speed Switchingwith Low Capacitances |
| 低反向恢复快速本征二极管 Fast Intrinsic Diode with Low Reverse Recovery | ·雪崩耐量强 | |
| Avalanche Ruggedness | ||
| SiCSBD芯片SiCSBDDie | ||
| 无反向恢复电流 | ·高浪涌电流能力 | ·低通态压降 |
| NoReverseRecoveryCurrent | High Surge Current Capability | Low Forward Voltage VF |
产品列表 PRODUCTS
| PartNo. | Technology | Vosmax[V] | Ros(on)[mΩ] | Tvjmax[°C] |
| DCM1000P17K1 | CSL | 1700 | 1000 | 175 |
| DCM45P17K1 | CSL | 1700 | 45 | 150 |
| DCM75P12K3 | CSL | 1200 | 75 | 150 |
| DCM40P12K2 | CSL | 1200 | 40 | 175 |
| DCM32P12K2 | CSL | 1200 | 32 | 175 |
| DCM32P12K2_B | CSL | 1200 | 32 | 175 |
| DCM13P12K3A | CSL | 1200 | 13 | 175 |
| DCM13P12K3A_02 | CSL | 1200 | 13 |
产品特性 FEATURES
·第三代SiCMOSFET技术3rd Generation SiC MOSFET Technolo
·高阻断电压/低导通电阻 High Blocking Voltage with Low On-Resistance
·高开关速度/低寄生电容 High Speed Switching with Low Capacitances
·无卤素添加，符合RoHS标准 Halogen Free, RoHS Compliant
应用场景 APPLICATION
产品列表 PRODUCTS
| PartNo. | Voss[V] | Ros(on)[mΩ] | [o[A] | VGSth[V] | loss[uA] | Tvimax[°C] | Packaging |
| NCM1000S17T7K1 | 1700 | 1000 | 8.4 | 3.2 | 1 | 150 | TO-263-7L |
| NCM45S17T3K1 | 1700 | 45 | 105 | 3.1 | 1 | 150 | TO-247-3L |
| NCM75S12T4K3 | 1200 | 75 | 43 | 3.1 | 1 | 175 | TO-247-4L |
| NCM40S12T4K2 | 1200 | 38 | 88 | 3.2 | 1 | 175 | TO-247-4L |
| NCM40S12T3K2 | 1200 | 38 | 88 | 3.2 | 1 | 175 | TO-247-3L |
| NCM32S12T4K2 | 1200 | 32 | 77 | 2.6 | 1 | 175 | TO-247-4L |
| NCM32S12T4K2_B | 1200 | 32 | 83 | 3.2 | 1 | 175 | TO-247-4L |
| NCM13S12T4K3A | 1200 | 13 | 167 | 2.9 | 1 | 175 | TO-247-4L |
| PartNo. | Vces[V] | Ic[A]Tc=100°C,Tvj=Tvjmax | VcE(sat)[V] | Tvimax[°C] | Packaging |
| NI75S07T3U7 | 650 | 75 | 1.6 | 175 | TO-247 |
应用案例 CASES
天津津门湖综合能源示范站充电桩 Charging Piles of Tianjin Jinmenhu Comprehensive Energy Demonstration Station
国内外新能源汽车充电桩项目 EV charging pile projects at home and abroad
产品特性FEATUI
应用场景 APPLICATION
·I-NPC拓扑，满足DC1500V系统需求
I-NPC Topology for DC 1500V Application
·无需器件并联，即可满足200\~250kW储能PCS需求
No need Parallel for 200\~250kW ES PCS
·开关频率 >=slant 16kHz
Fsw≥16kHz
·最大效率 >=99%
Max.Efficiency≥99%
·低开关损耗、低导通损耗
Low Switching Loss and Conducting Loss
·高导热封装材料设计
High Thermal Conductivity Package Material
| PartNo. | Vces[V] | Ic[A]Tc=100°C,Tvj=Tvjmax | Vce(sat)[V] | V[V] | Tvjmax[°C] | Packaging |
| NI450TN12A3F5 | 1200 | 450 | 2.36 | 2.55 | 150 | A3 |
| NI450TN12A3F5_D1 | 1200 | 450 | 2.36 | 2.55 | 150 | A3 |
产品特性 FEATURES
| PartNo. | Vces[V] | Ic[A]Tc=100°C,Tvj=Tvjmax | VcE(sat)[V] | V-[V] | Tvjmax[°C] | Packaging |
| NI900B17E6K7_G1 | 1700 | 900 | 1.8 | 2.1 | 175 | E6+ |
| NI600B17E6K4 | 1700 | 600 | 1.8 | 2.2 | 150 | E6 |
| NI450B17E6K4 | 1700 | 450 | 1.8 | 2 | 150 | E6 |
| NI300B17E6K4 | 1700 | 300 | 1.8 | 2 | 150 | E6 |
| NI225B17E6K4 | 1700 | 225 | 1.8 | 1.9 | 150 | E6 |
| NI900B12E6K7_G1 | 1200 | 900 | 1.75 | 1.9 | 150 | E6 |
| NI600B12E6K4_D2 | 1200 | 600 | 1.75 | 1.75 | 150 | E6 |
| NI450B12E6K4 | 1200 | 450 | 1.75 | 2.25 | 150 | E6 |
应用案例 CASES
产品特性 FEATURES
·低开关损耗
Low Switching Loss
·高可靠性
High Reliability
·IGBT/FRD芯片正温度系数
PositiveTemperature Coefficient
·低热阻AINDBC Low Rth AIN DBC
电路结构CIRCUIT
应用场景 APPLICATION
| PartNo. | Vces[V] | Ic[A]Tc=100°C,Tvj=Tvjmax | Vce(sat)[V] | V-[V] | Tvjmax[°C] | Packaging |
| NI1500S33H2K1 | 3300 | 1500 | 2.45 | 2.10 | 150 | H2 |
| NI1000S33H1K1 | 3300 | 1000 | 2.45 | 2.10 | 150 | H1 |
应用案例
CASES
土320kV/1000MW厦门柔性直流输电工程±320kV/1000MW Xiamen Flexible DC Transmission Project
产品特性FEATUF
·IGBT低导通压降 IGBT Low VcE(Sat)
·IGBT芯片低漏电 IGBT Low IcEs
·GBT/FRD芯片正温度系数 Positive Temperature Coefficient
·具备防爆能力 Explosion Proof Capability
·GBT/FRD最高结温 135°C IGBT/FRD Tvjopmax: 135°C
电路结构CIRCUIT
应用场景 APPLICATION
| PartNo. | Vces[V] | Ic[A]Tc=100°C,Tvj=Tvjmax | Vce(sat)[V] | V-[V] | Tvjmax[°C] | Packaging |
| NI3000S65S3K2 | 6500V | 3000A | tbd | tbd | 135°C | S3 |
| NI5000S45S4K2 | 4500V | 5000A | tbd | tbd | 135°C | S4 |
| NI3000S45S1K1 | 4500V | 3000A | 3.35V | 2.85V | 125°C | S1 |
| NI2000S45S2K1 | 4500V | 2000A | 3.35V | 2.85V | 125°C | S2 |
应用案例CAS
土500kV/3000MW张北柔性直流电网工程±500kV/3000MW Zhangbei Flexible DC Grid Project
土800kV/8000MW白鹤滩\~江苏特高压直流输电工程±800kV/80ooMW Baihetan\~ Jiangsu Ultra High Voltage Direct Current Transmission Project
四川成都电网侧构网型SVG项目The grid-side grid-forming SVG project in Chengdu, Sichuan
西藏拉萨电网侧带超容构网型SVG项目
The grid-side grid-forming SVG project with ultra-capacitor in Lhasa, Tibet
产品特性 FEATURES
应用场景 APPLICATION
·第三代半导体-碳化硅 New Semiconductor-SiC ·IGBT低开关损耗 IGBT Low Switching Loss ·IGBT/FRD芯片正温度系数 Positive Temperature Coefficient ·IGBT/FRD最高结温 175°\mathsf{C} IGBT/FRD Tvjop_max: 175°C
电路结构CIRCUIT
产品列表 PRODUCTS
车规IGBT模块产品列表Automotive-GradeIGBTModuleProductList南京南瑞半导体有限公司NANJINGNARISEMICONDUCTORCO.,LTD
| PartNo. | Vces[V] | Ic[A]Tc=100°C,Tvj=Tvjmax | VcE(sat)[V] | VF[V] | Tvjmax[°C] | Packaging |
| N1450F12D2A | 1200 | 450 | 1.6 | 2.0 | 150 | D2 |
| NI820F08D2A | 750 | 820 | 1.45 | 1.8 | 150 | D2 |
| PartNo. | Vces[V] | Ic[A]Tc=100°C,Tvj=Tvjmax | Ros(on)[mΩ] | Tvimax[°C] | Packaging |
| NCM02F12D3A | 1200 | 600 | 1.7 | 175 | D3 |
地址：中国江苏省南京市江宁技术开发区诚信大道19号
No. 19, Chengxin Avenue, Jiangning District, Nanjing City, Jiangsu Province, China
Tel:+86025-81086099
E-mail: nrly@sgepri.sgcc.com.cn
