半导体设备选型册

行业合作创新与系统解决方案的领导者

固睿半导体设备，成立于2020年12月，公司以多名半导体研发、制造、零部件、设备等领域经验丰富的从业人员为核心，致力于成为领先的半导体领域核心工艺解决方案商。目前公司核心产品以晶圆段立/卧式氧化，退火，LPCVD，以及生产陶瓷基板钎焊炉，烧结炉为主，应用领域集中在半导体芯片和陶瓷基板相关生产制造。公司2025起在无锡和深圳设立双研发中心，拉动长三角和珠三角两地半导体资源协同发展，并在无锡新建2000平百级洁净间，提升公司面向半导体客户的基础能力，加速半导体提领域发展。

固睿半导体将秉承“客户至上、结果导向、持续创新、合作共赢、诚信正直”的经营理念，致力成为行业合作创新与系统解决方案的领导者。

G&DSemiconductorSystems,established inDecember 2020,isbuiltaroundacore teamof seasonedprofessionalswith extensive experience insemiconductor R&D，manufacturing，components，and equipment.The companyisdedicatedtobecominga leading providerofcoreprocesssolutionsinthesemiconductor field.Currently,thecompany'scoreproductsprimarilyincludevertical/horizontaloxdationfurnaces,annealingfurnaces, andLPCVDequipmentforthewaferfabricationsegment,aswellasbrazing furnacesandsinteringfurnaces forceramicsubstrateproduction.Itsapplicationsarefocused onthemanufacturing processesrelatedtosemiconductor chipsand ceramicsubstrates.Starting in2O25,thecompanywillestablishdualR&Dcenters in Wuxi andShenzhen.This initiative aims to leverageand synergize semiconductor resourcesacross the Yangtze River DeltaandthePearlRiverDelta.Concurrentlyanew2Ooo-square-meterClass100cleanroomisbeingbuiltin Wuxitoenhancethecompany'sfundamental capabilities inserving semiconductorclientsandaccelerate its development inthesemiconductor field.

G&DSemiconductorupholdsthebusiness philosophyof "Customer First,Results-Oriented,Continuous Innovation,Mutualuccesstegritydosty"striingtocomealadeinidustryaboativeinovtioad systemsolutions.

Bhadra200

BhadraTM8时立式扩散炉Horizontal multi-function furnace

原位清洗能力in-situclean function

高稳定性Highstability

晶圆尺寸/Wafersize

6、8英寸
6-inch、8-inch"

应用领域/Appliedfield

功率半导体、集成电路、衬底材料、科研PowerIC,IC,SubstrateMaterials,R&D

工艺类型/Process

氧化、退火、合金、LPCVDOxidation、Anneal、Alloy、LPCVD

适用材料/Applicablematerial

硅、碳化硅Si、SiC

HBA200

BhadraTM 8时碳化硅超高温退火炉

8-inch Silicon carbide ultra-high temperature annealing furnace

晶圆尺寸/Wafersize

6、8英寸
6-inch、8-inch"

应用领域/Appliedfield

功率半导体、科研 PowerIC，R&D

工艺类型/Process

SiC衬底材料注入后高温激活、沟槽平滑 High-Tempactivation,Trenchsmoothing

适用材料/Applicablematerial

碳化硅 SiC

HB0150

BhadraTM6时碳化硅超高温退火炉

BhadraTM 6-inch SiC High-TEMP Anneal system

快速升降温技术 Technologyforrapidtemperaturerampingrate

可维护性高Goodmaintainability

晶圆尺寸/Wafersize

4、6英寸
4-inch、6-inch"

应用领域/Appliedfield

功率半导体、科研 PowerIC，R&D

工艺类型/Process

SiC衬底材料注入后高温激活、沟槽平滑 High-Tempactivation,Trenchsmoothing

适用材料/Applicablematerial

碳化硅 SiC

HBO150

BhadraTM 6时碳化硅超高温氧化炉

BhadraTM 6-inch SiC High-TEMP Oxidation system

独特的湿氧工艺Unique wet oxidation process

配有DCE原位清洗功能 Equipped with DCE in situclean function

晶圆尺寸/Wafersize

4、6英寸
4-inch、6-inch"

应用领域/Appliedfield

功率半导体、科研 PowerIC，R&D

工艺类型/Process

干氧氧化、湿氧氧化(选配)Dryoxidation,Wet oxidation(optional)

适用材料/Applicablematerial

碳化硅 SiC

ED200S

BhadraTM8时碳化硅外延设备

BhadraTM8-inch Silicon Carbide Epitaxial System

垂直沉积技术 Verticalreverseepitaxialtechnique

颗粒缺陷极少，产品良率高 Fewparticledefects,High productyield

维护周期长，可维护性高Longmaintenancecycle,Goodmaintainability

晶圆尺寸/Wafersize

6、8英寸
6-inch、8-inch"

应用领域/Appliedfield

功率半导体、科研 Power IC，R&D

工艺类型/Process

SiC外延生长 Epitaxial growth

适用材料/Applicablematerial

碳化硅 SiC

PLX200

PindolaTM卧式多功能炉 Horizontal multi-function furnace

高产能High productivity

可维护性高Goodmaintainability

产品性能介绍Product introduction

晶圆尺寸/Wafersize

8英寸以下under 8-inch"

应用领域/Appliedfield

功率半导体、光电器件、科研 Power IC、Optoelectronic devices、R&D

工艺类型/Process

氧化、退火、合金、LPCVDOxidation、Anneal、Alloy、LPCVD

适用材料/Applicablematerial

硅、碳化硅Si、SiC

HBA200

BhadraTM 8时碳化硅超高温氧化炉

8-inch Silicon carbide ultra-high temperature oxidation furnace

晶圆尺寸/Wafersize

工艺类型/Process

6、8英寸
6、8-inch"

干氧(栅氧）、湿氧Dry Oxidation(Gate Oxidation)、Wet Oxidation

应用领域/Applied field

适用材料/Applicablematerial

功率半导体、科研 Power IC，R&D

碳化硅 SiC

Bhadra300

BhadraTM12时立式扩散炉 12-inch Vertical diffusion furnace

可靠的颗粒控制能力Robustparticlecontrol

高稳定性Highstability

晶圆尺寸/Wafersize 12英寸/12-inch"

工艺类型/Process

氧化、退火、合金、LPCVD/Oxidation、Anneal、Alloy、LPCVD

应用领域/Applied field

功率半导体、集成电路、科研 PowerIC、IC、R&D

适用材料/Applicablematerial硅/Si