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Elite series
Semiconductor processing
UV-clean patented technology
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Protection grade IP65
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Service life 20,000+h
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Excellent beam quality
All-in-one structure, highly integrated
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Reliable performance and repair < 3 %
The high-energyultraviolet laser,characterizedbyawavelengthof355nm,featuresasingle-pulse energyof 1 . 5 \mathsf { m J } and a high peak power.IteffcientlycutsSiCanddiamondwafers,directlyseveringthewafersandmetallayerswithhigheficiencyandaminimal edge breakage ( < 2 \mathsf { u m } ) #
Features
· The laser power is 15W;
● Excellent beam quality \mathsf { M } ^ { 2 } < 1 . 3 ,simple process,and higher efficiency;
·Adopt UV-clean patented technology to solve power attenuation worry free used;
● 3-layer protection,protection grade IP65,more suitable for harsh working environment;
●The servicelife exceeds 20o00 hours,maintenance is fre,and no need forregular commissioning orcalibration.
| Model No. | MMEPU-355-15-HE |
| Optical Characteristics | |
| Wavelength (nm) | 355nm |
| Average Power (W) | >15W@10kHz |
| Single Pulse Energy (uJ) | ~1500uJ@10kHz |
| Pulse Width (ns) | 30ns@10kHz |
| Repitition Rate | |
| Pulse Stability | 10-20kHz |
| Long Term Stability | |
| Beam Characteristics | |
| Polarization Ratio | Horizontal; >100:1 |
| Beam Diameter | ~1mm(at exit) |
| Beam Circularity | >90% |
| Spatial Mode | TEM00,M² |
| Operating Specifications | |
| Warm-up Time | |
| Electrical Requirement AmbientTemperature | DC17.5V,350W |
| 10-35C，RH | |
| Storage Conditions | -10-40C，RH |
| Physical Characteristics | |
| Cooling System | Water-Cooled |
| Water Temperature (laser inlet) | 25℃ |
Applications
● Ceramic scribing and drilling • SiC,diamond wafer scribing and drilling
Ithasexcelentpoeabilitysurigoteropeationdattameti,sgingleueeergyioduce higher energydensity quickly,thereby betterhandling materials with higher hardness,suchassiliconcarbide.
Features
• The laser power is 18-30W;
● Rugged, easy to install,and easy to integrate;
• Excellent beam quality M ^ { 2 } < 1 . 3 ,simple process,and higher efficiency;
● Adopt UV-clean patented technology to solve power attenuation worry free used;
●The servicelifeexceeds 20o hours,maintenance is free,and no need forregular commissioning orcalibration.
| Model No. | MMEPU-355-18 | MMEPU-355-20 | MMEPU-355-25 | MMEPU-355-30 |
| Optical Characteristics | ||||
| Wavelength (nm) | 355nm±1nm | |||
| Average Power (W) | >18W@50kHz | >20W@50kHz | >25W@50kHz | >30W@50kHz |
| Single Pulse Energy (uJ) | ~350uJ@50kHz | ~400uJ@50kHz | ~500uJ@50kHz | ~600uJ@50kHz |
| Pulse Width (ns) | 12ns@50kHz | |||
| Repitition Rate | 50-500kHz | |||
| Pulse Stability | ||||
| Long Term Stability | ||||
| Beam Characteristics | ||||
| Polarization Ratio | ||||
| Beam Diameter | Horizontal; >100:1 | |||
| Beam Circularity | ~1mm(at exit)/~6mm(6X beam expander) | |||
| Spatial Mode | >90% | |||
| Operating Specifications | TEM00,M² | |||
| Warm-up Time | ||||
| Electrical Requirement | ||||
| Ambient Temperature | 10-35°C，RH | |||
| Storage Conditions | -10-40°C，RH | |||
| Physical Characteristics | ||||
| Cooling System | Water-Cooled | |||
| Water Temperature (laser inlet) | 25℃ | |||
Applications
• Film cutting ● Solar cell scribing • SiC wafer scribing ● PCB& FPC splitting and cutting
tsextremelyhighpowerstabilityguaranteeslong-termoperation.Atthesametime,ithashighsinglepulseenergy,whichcan oroduce higherenergy densityinashortime,thus betterdealing with materials with higher hardness such as Sic.
Features
• The laser power is 3 0 W ● Excellent beam quality \mathsf { M } ^ { 2 } < 1 . 3 ,simple process,and higher efficiency;
·Adopt UV-clean patented technology to solve power attenuation worry free used;
●3-layer protection,protection grade IP65,more suitable for harsh working environment;
●The servicelifeexceeds 20o0 hours,maintenance is free,and no need forregular commissioning orcalibration.
| Model No. | MMEPG-532-30 |
| Optical Characteristics | |
| Wavelength (nm) | 532nm |
| Average Power (W) | >30W@60kHz |
| Single Pulse Energy (uJ) | ~500uJ@60kHz |
| Pulse Width (ns) | 20ns@60kHz |
| Repitition Rate | 50-500kHz |
| Pulse Stability | |
| Long Term Stability | |
| Beam Characteristics | |
| Polarization Ratio | Vertical; >100:1 |
| Beam Diameter | 6mm(Built in beam expander) |
| Beam Circularity | >90% |
| Spatial Mode Operating Specifications | TEMo0,M² |
| Warm-up Time | |
| Electrical Requirement | |
| AmbientTemperature | DC24V,600W 10-35℃，RH |
| Storage Conditions | |
| Physical Characteristics | -10-40°C，RH |
| Cooling System | Water-Cooled |
| Water Temperature (laser inlet) | 25℃ |
Applications
● Wafer annealing ● Wafer drilling and scribing
TianjinMaimanLaser Technology Co., Ltd.
Address:201,D6-A, East Huigu Industrial Park,Xiqing District, Tianjin
Tel:+86-22-8789 4207 87894217
Mobile: + 8 6 17526524352
Fax:+86-22-87894217
Website:www.maimanlaser.com
Email:maimanlaser@maimanlaser.com
Maiman
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Tianjin MaimanlaserTechnology Co.,Ltd.reserves the copy right of thiscatalog and reservesal the rights to change the information and specifications contained in this catalog without prior notice.
