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ESDSRV05-4H

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ESDSRV05-4H

Description

The ESDSRV05-4H has ultra low capacitance rail-to-rail diodes

with an additional zener diode fabricated in a proprietary silicon

avalanche technology to protect each I/O pin providing a high

level of protection for electronic equipment that may experience

destructive electrostatic discharges (ESD). These robust

diodes can safely absorb repetitive ESD strikes at the

maximum level (level 4) specified in the IEC 61000-4-2

international standard without performance degradation. Their

very low loading capacitance also makes them ideal for

protecting high speed signal pins such as DVI,USB2.0, and

IEEE 1394.

Features

⚫ Case :JEDEC SOT-23-6L package

⚫ Low clamping voltage

⚫ Small packaging options saves board space

⚫ Low capacitance :3.5 pF typical

⚫ Protection for 4 Lines

⚫ Compatible with IEC 61000-4-2(ESD) :Air 30KV , Contact

30KV

⚫ Compatible with IEC 61000-4-5(Surge):30A ,8/20 uS -

level 2 (line-GND)&Level 3 (Line-Line)

Applications

⚫ USB Power and Data Line Protection

⚫ 10/100 Ethernet

⚫ Video Graphics Cards

⚫ SIM Ports

⚫ ATM Interfaces

⚫ Montors and Flat Panel Displays

⚫ Digital Video Interface(DVI)

⚫ IEEE 1394 Fire wire Ports

Functional Diagram

Rail-to-Rail Protection

Dual USB Port Protection

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ESDSRV05-4H

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Absolute Maximum Ratings(Tamb=25°C unless otherwise specified)

Parameter Symbol Value Units

Peak Current (tp =8/20μs) PPK 450 W

IEC61000-4-2 (Contact) VESD ±30 kV

IEC61000-4-2 (Air) VESD ±30 kV

Lead Soldering Temperature TL 260 (10 sec) °C

Operating Temperature TJ -50 to 125 °C

Storage Temperature Range TSTG -50 to 150 °C

Electrical Characteristics (TA = 25 °C unless otherwise noted)

Parameter Symbol Conditions Min. Typ. Max. Units

Reverse Stand-off Voltage VRWM Any I/O pin to ground 5 V

Reverse Breakdown Voltage VBR

It = 1mA

Any I/O pin to ground

6 V

Reverse Leakage Current IR

VRWM =5.0V, T=25℃

Any I/O pin to ground

1 μA

Clamping Voltage

VC

IPP = 1A,

tP=8/20μs

Any I/O pin to ground

9 10 V

VC

IPP =20A,

tP=8/20μs

Any I/O pin to ground

19 20 V

Junction Capacitance

CJ1

VR=0V, f = 1MHz

Between I/0 pins

1.6 2.5 pF

CJ2

VR=0V, f = 1MHz

Any I/O pin to ground

3.2 5 pF

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ESDSRV05-4H

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Characteristics Curves

ACKAGE OUTLINE DIMENSIONS in millimeters:SOT23-6L

Figure 3- Power Derating Curve

Figure 2- ESD Pulse Waveform

(according to IEC 61000-4-2)

Figure 1-Pulse Waveform

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ESDSRV05-4H

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Disclaimer

Specifications are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device

performance may vary over time.

Users should verify actual device performance in their specific applications.